10kW 雙向三相三級(jí)sic CAR CHARGER參考設(shè)計(jì)
這一經(jīng)過(guò)驗(yàn)證的參考設(shè)計(jì)概述了如何實(shí)現(xiàn)基于 SiC 的三級(jí)三相直流/交流 T 型逆變器級(jí)。50KHz 的較高開(kāi)關(guān)頻率減小了濾波器設(shè)計(jì)的磁性元件尺寸,并因此提高了功率密度。通過(guò)使用可降低開(kāi)關(guān)損耗的 SiC MOSFET,可確保實(shí)現(xiàn)高達(dá) 1000V 的更高直流總線電壓和更低的開(kāi)關(guān)損耗,從而達(dá)到 99% 的峰值效率。此設(shè)計(jì)可配置為兩級(jí)或三級(jí)逆變器。該系統(tǒng)由單個(gè) C2000 微控制器 (MCU) TMS320F28379D 進(jìn)行控制,可在所有運(yùn)行模式下為所有電源電子開(kāi)關(guān)器件生成 PWM 波形。
特性
- 額定標(biāo)稱(chēng)輸入電壓/最大輸入電壓:800V/1000VDC
- 在 400VAC 50/60Hz T 型連接時(shí)的最大輸出功率為 10kW/10KVA
- 工作時(shí)的功率因數(shù)范圍為 0.7 滯后至 0.7 超前
- 基于高壓 (1200V) SiCMosFET 的全橋逆變器,峰值效率高達(dá) 99%
- 滿(mǎn)載時(shí)的輸出電流 THD 小于 2%
- 使用 AMC1301 進(jìn)行隔離式電流檢測(cè),從而實(shí)現(xiàn)負(fù)載電流監(jiān)測(cè)
用于驅(qū)動(dòng)高壓 SiC MOSFET 并具有增強(qiáng)型隔離功能的隔離式驅(qū)動(dòng)器 ISO5852S,以及用于驅(qū)動(dòng)中間 Si IGBT 的 UCC5320S
2 System Overview 2.1 Block Diagram Figure 2-1. TIDA-01606 Block Diagram This reference design is comprised of four separate boards that intercommunicate. The following boards work in tandem to form this three-phase inverter reference design: ? A power board, comprising all of the switching device, LCL filter, sensing electronics, and power structure ? A TMS320F28379D Control Card to support the DSP ? Three gate driver cards, each with two ISO5852S and two UCC5320 gate drivers ? A DC bus voltage measuring board (TIDA-01606 ISOHVCARD)
2.2 Highlighted Products 2.2.1 ISO5852S The ISO5852S device is a 5.7-kVRMS, reinforced isolated gate driver for IGBTs and MOSFETs with split outputs, OUTH and OUTL, providing 2.5-A source and 5-A sink current. The input side operates from a single 2.25-V to 5.5-V supply. The output side allows for a supply range from minimum 15 V to maximum 30 V. Two complementary CMOS inputs control the output state of the gate driver. The short propagation time of 76 ns provides accurate control of the output stage. ? 100-kV/μs minimum common-mode transient immunity (CMTI) at VCM = 1500 V ? Split outputs to provide 2.5-A peak source and 5-A peak sink currents ? Short propagation delay: 76 ns (typ), 110 ns (max) ? 2-A active Miller clamp ? Output short-circuit clamp ? Soft turnoff (STO) during short circuit ? Fault alarm upon desaturation detection is signaled on FLT and reset through RST ? Input and output undervoltage lockout (UVLO) with Ready (RDY) pin indication ? Active output pulldown and default low outputs with low supply or floating inputs ? 2.25-V to 5.5-V input supply voltage ? 15-V to 30-V output driver supply voltage www.ti.com System Overview TIDUE53G – MARCH 2018 – REVISED SEPTEMBER 2022 Submit Document Feedback 10-kW, Bidirectional Three-Phase Three-Level (T-type) Inverter and PFC Reference Design 3 Copyright ? 2022 Texas Instruments Incorporated? CMOS compatible inputs ? Rejects input pulses and noise transients shorter than 20 ns ? Operating temperature: –40°C to +125°C ambient ? Isolation surge withstand voltage of 12800-VPK GND1 VEE2 RST RDY FLT IN+ IN± VCC1 VCC2 DESAT GND2 OUTH OUTL CLAMP VCC1 VCC1 UVLO1 Mute Decoder Q SR Q VCC1 VCC1 Gate Drive and Encoder Logic UVLO2 2 V 9 V 500 μA STO VCC2 Ready Fault Figure 2-2. ISO5852S Functional Block Diagram 2.2.2 UCC5320 The UCC53x0 is a family of compact, single-channel, isolated IGBT, SiC, and MOSFET gate drivers with superior isolation ratings and variants for pinout configuration, and drive strength. The UCC53x0 is available in an 8-pin SOIC (D) package. This package has a creepage and clearance of 4 mm and can support isolation voltage up to 3 kVRMS, which is good for applications where basic isolation is needed. With these various options and wide power range, the UCC53x0 family is a good fit for motor drives and industrial power supplies. ? 3-V to 15-V input supply voltage ? 13.2-V to 33-V output driver supply voltage ? Feature options: – Split outputs (UCC5320S and UCC5390S) – UVLO with respect to IGBT emitter (UCC5320E and UCC5390E) – Miller clamp option (UCC5310M and UCC5350M) ? Negative 5-V handling capability on input pins ? 60-ns (typical) propagation delay for UCC5320S, UCC5320E, and UCC5310M ? 100-kV/μs minimum CMTI ? Isolation surge withstand voltage: 4242 VPK ? Safety-related certifications: – 4242-VPK isolation per DIN V VDE V 0884-10 and DIN EN 61010-1 (planned) – 3000-VRMS isolation for 1 minute per UL 1577 (planned) – CSA Component Acceptance Notice 5A, IEC 60950-1 and IEC 61010-1 End Equipment Standards (Planned) – CQC Certification per GB4943.1-2011 (Planned) System Overview www.ti.com 4 10-kW, Bidirectional Three-Phase Three-Level (T-type) Inverter and PFC Reference Design TIDUE53G – MARCH 2018 – REVISED SEPTEMBER 2022 Submit Document Feedback Copyright ? 2022 Texas Instruments Incorporated? 4-kV ESD on all pins ? CMOS inputs ? 8-pin narrow body SOIC package ? Operating temperature: –40°C to +125°C ambient text VCC2 UVLO, Level Shift and Control Logic VCC2 VOUTH IN± IN+ VOUTL VCC1 VEE2 GND1 UVLO and Input Logic 15 V Rest of Circuit 5 V Figure 2-3. UCC5320 Functional Block Diagram (S Version) 2.2.3 TMS320F28379D The Delfino? TMS320F2837xD is a powerful 32-bit floating-point microcontroller unit (MCU) designed for advanced closed-loop control applications such as industrial drives and servo motor control; solar inverters and converters; digital power; transportation; and power line communications. Complete development packages for digital power and industrial drives are available as part of the powerSUITE and DesignDRIVE initiatives. While the Delfino product line is not new to the TMS320C2000? portfolio, the F2837xD supports a new dual-core C28x architecture that significantly boosts system performance. The integrated analog and control peripherals also let designers consolidate control architectures and eliminate multiprocessor use in high-end systems. ? Dual-core architecture: – Two TMS320C28x 32-bit CPUs – 200 MHz – IEEE 754 single-precision floating-point unit (FPU) – Trigonometric math unit (TMU) – Viterbi/complex math unit (VCU-II) ? Two programmable control law accelerators (CLAs) – 200 MHz – IEEE 754 single-precision floating-point instructions – Executes code independently of main CPU ? On-chip memory – 512KB (256 kW) or 1MB (512 kW) of Flash (ECC-protected) – 172KB (86 kW) or 204KB (102 kW) of RAM (ECC-protected or parity-protected) – Dual-zone security supporting third-party development ? Clock and system control: – Two internal zero-pin 10-MHz oscillators – On-chip crystal oscillator – Windowed watchdog timer module – Missing clock detection circuitry ? 1.2-V core, 3.3-V I/O design ? System peripherals: – Two external memory interfaces (EMIFs) with ASRAM and SDRAM support – Dual six-channel direct memory access (DMA) controllers